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电沉积铜铟硫薄膜的制备及性能研究
Study on preparation and properties of electrodeposited copper indium sulfur thin films
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- DOI:
- 作者:
- 单宇航，谷昊，袁首盛，王东华
Shan Yuhang, Gu Hao, Yuan Shousheng, Wang Donghua
- 作者单位:
- 中国石油大庆炼化公司研究院，黑龙江大庆163712
Research Institute, PetroChina Daqing Refining & Petrochemical Company, Daqing 163712, China
- 关键词:
- 电沉积；铜铟硫；薄膜；太阳能电池
electrodeposition; copper indium sulfur; thin film; solar cell
- 摘要:
- 摘要：随着化石能源的日益枯竭，开发石油化工产业的节能材料是大势所趋。文中在柠檬酸
钠体系中采用一步电沉积法进行沉积太阳能电池铜铟硫（CIS）吸收层，再将薄膜进行热处理。
分别探究了CuSO4浓度、In2（SO4）3 浓度、Na2S2O3 浓度、柠檬酸钠浓度、热处理温度、pH 及明胶
量等因素对CuInS2 薄膜性能的影响；并将薄膜与ZnS 组装成了CuInS2薄膜太阳能电池。采用
I-V 法测试光电转换性能，冷热探针法测试半导体类型，紫外分光光度计测试禁带宽度，原子
力显微镜测试了薄膜表面形貌。调节电解液配比、热处理温度等因素得到的最优铜铟硫
（CuInS2，CIS）薄膜，其表面均匀，禁带宽度为1.59 eV，与理论值最接近；半导体类型为p 型，光
照和暗盒条件下的电池I-V 曲线斜率偏移率为112.20%。
Abstract: With the depletion of fossil energy, the development of energy-saving materials in the petrochemical industry is the
trend. In this paper, the copper indium sulfur (CIS) absorption layer of solar cell was deposited by one-step electrodeposition
method in sodium citrate system, and then the film was heat treated. The effects of CuSO4 concentration, In2 (SO4)3 concentration,
Na2S2O3 concentration, sodium citrate concentration, heat treatment temperature, pH and gelatin content on the properties of CuInS2
films were investigated. The thin film and ZnS were assembled into CuInS2 thin film solar cells. The photoelectric conversion
performance was measured by I-V method, the semiconductor type was measured by hot and cold probe method, the band gap width
was measured by ultraviolet spectrophotometer, and the surface morphology of the film was measured by atomic force microscope.
The optimal CuInS2 (CIS) film obtained by adjusting the electrolyte ratio and heat treatment temperature had a uniform surface and a
band gap of 1.59 eV, which is the closest to the theoretical value. The semiconductor type is P-type, and the slope deviation of the
I-V curve of the battery was 112.20% under light and cassette conditions.